LKK47-06C5【PDF 1/4 页】MOSFET DUAL 600V 47A ISOPLUS264

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Sheet目录468

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Advanced Technical Information

Dual CoolMOS ? 1) Power MOSFET

Common Source Topology

DCB isoated package

LKK 47-06C5

V DSS = 600 V

I D25 = 47 A

R DS(on) max = 45 m Ω / MOSFET

MOSFET T1/T2

Features

? fast CoolMOS ? 1) power MOSFET

Symbol

Conditions

Maximum Ratings

4 th generation

- High blocking capability

V DSS

V D1D2

V GS

I D25

I D90

T VJ = 25°C

T C = 25°C

T C = 90°C

600

±600

±20

- Lowest resistance

- Avalanche rated for unclamped

inductive switching (UIS)

- Low thermal resistance

due to reduced chip thickness

? Enhanced total power density

E AS

E AR

single pulse

repetitive

I D = 11 A; T C = 25°C

1950

Applications

? AC Switch

- power regulation of AC heating

- light dimming

? Power factor correction (PFC)

Symbol

Conditions

Characteristic Values

(T VJ = 25 ° C, unless otherwise specified)

interleaved operation mode

? Push pull converter

min.

typ.

max.

CoolMOS ? is a trademark of

R DSon

V GS = 10 V; I D = 44 A

total between D1 and D2

45 m Ω

m Ω

Infineon Technologies AG.

V G1S = V G2S = 10 V; I D = 44 A

V GSth

I DSS

V DS = V GS ; I D = 3 mA

V DS = V DSS ; V GS = 0 V; T VJ = 25°C

2.5

3.5

μA

T VJ = 125°C

μA

I GSS

C iss

C oss

V GS = ±20 V; V DS = 0 V

V GS = 0 V; V DS = 100 V

f = 1 MHz

6800

320

100

Q g

Q gs

Q gd

t d(on)

t r

t d(off)

t f

V GS = 0 to10 V; V DS = 400 V; I D = 44 A

V GS = 10 V; V DS = 400 V;

I D = 44 A; R G = 3.3 Ω

150

100

190

R thJC

0.45 K/W

R thCH

with heatsink compound

0.25

K/W

IXYS reserves the right to change limits, test conditions and dimensions.

20090209b

1-4

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